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Results 1 to 25 of 381

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Photoresponse properties of ultrathin Bi2Se3 nanosheets synthesized by hydrothermal intercalation and exfoliation routeCHEN ZANG; XIANG QI; LONG REN et al.Applied surface science. 2014, Vol 316, pp 341-347, issn 0169-4332, 7 p.Article

The crystal structure of a new boron selenide, B12Se2-xBxBOLMGREN, H; LUNDSTRÖM, T.Journal of alloys and compounds. 1993, Vol 202, pp 73-76, issn 0925-8388Article

Mécanismes de diffusion et variation thermique de la masse effective des électrons dans les solutions solides à base de tellurure de bismuthGOL'TSMAN, B. M; IKONNIKOVA, G. N; KUTASOV, V. A et al.Fizika tverdogo tela. 1985, Vol 27, Num 2, pp 542-545, issn 0367-3294Article

Conductivité thermique des solutions solides à basse de tellurure de bismuthGOL'TSMAN, B. M; IKRONNIKOVA, G. N; KUTASOV, V. A et al.Fizika tverdogo tela. 1986, Vol 28, Num 7, pp 2218-2221, issn 0367-3294Article

Diagrammes d'état des systèmes Bi-Ag2Se et Bi2Se3-AgSEIDOVA, N. A; RUVINOVA, R. EH.Žurnal neorganičeskoj himii. 1988, Vol 33, Num 11, pp 2954-2956, issn 0044-457XArticle

Electrodeposition and characterization of copper bismuth selenide semiconductor thin filmsJIYU LI; LIANGXING JIANG; BO WANG et al.Electrochimica acta. 2013, Vol 87, pp 153-157, issn 0013-4686, 5 p.Article

Quintuple layer Bi2Se3 thin films directly grown on insulating SiO2 using molecular beam epitaxyJEONG HEUM JEON; MISUN SONG; HOWON KIM et al.Applied surface science. 2014, Vol 316, pp 42-45, issn 0169-4332, 4 p.Article

Multi-layered nanostructure Bi2Se3 grown by chemical vapor deposition in selenium-rich atmosphereMEI LIU; FU YAN LIU; BAO YUAN MAN et al.Applied surface science. 2014, Vol 317, pp 257-261, issn 0169-4332, 5 p.Article

Influence du paramètre de diffusion effectif sur la masse de la densité d'états et la mobilité dans les solutions solides à base de chalcogénures de bismuth et d'antimoineKUTASOV, V. A; LUK'YANOVA, L. N.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 4, pp 652-656, issn 0015-3222Article

Power Factor Anisotropy of p-Type and n-Type Conductive Thermoelectric Bi-Sb-Te Thin FilmsROTHE, K; STORDEUR, M; LEIPNER, H. S et al.Journal of electronic materials. 2010, Vol 39, Num 9, pp 1395-1398, issn 0361-5235, 4 p.Conference Paper

Photoemission (XPS and UPS) study of amorphous Bi2Se3 filmTAKAHASHI, T; SAGAWA, T; HAMANAKA, H et al.Journal of non-crystalline solids. 1984, Vol 65, Num 2-3, pp 261-267, issn 0022-3093Article

AFM and Raman studies of topological insulator materials subject to argon plasma etchingCHILDRES, Isaac; JIFA TIAN; MIOTKOWSKI, Ireneusz et al.Philosophical magazine (2003. Print). 2013, Vol 93, Num 4-6, pp 681-689, issn 1478-6435, 9 p.Article

Signatures of charge inhomogeneities in the infrared spectra of topological insulators Bi2Se3, Bi2Te3 and Sb2Te3DORDEVIC, S. V; WOLF, M. S; STOJILOVIC, N et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 7, issn 0953-8984, 075501.1-075501.5Article

1/f noise in conducting channels of topological insulator materialsZAHID HOSSAIN, M; RUMYANTSEV, Sergey L; TEWELDEBRHAN, Desalegne et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 1, pp 144-146, issn 1862-6300, 3 p.Article

A study of bismuth sulphoselenide thin films : growth from the solution and propertiesPATIL, A. R; PATIL, V. N; BHOSALE, P. N et al.Materials chemistry and physics. 2000, Vol 65, Num 3, pp 266-274, issn 0254-0584Article

Crystallization kinetics of the chalcogenide Bi10Se90 glassEL-OYOUN, M. A.The Journal of physics and chemistry of solids. 2000, Vol 61, Num 10, pp 1653-1662, issn 0022-3697Article

Raman scattering in sputtered amorphous Ge25Se75-xBix filmsMYTILINEOU, E; CHAO, B. S; PAPADIMITRIOU, D et al.Journal of non-crystalline solids. 1996, Vol 195, Num 3, pp 279-285, issn 0022-3093Article

Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystalsAUGUSTINE, Saji; MATHAI, Elizabeth.Materials research bulletin. 2001, Vol 36, Num 13-14, pp 2251-2261, issn 0025-5408Article

Surface-Sensitive Two-Dimensional Magneto-Fingerprint in Mesoscopic Bi2Se3 ChannelsKANDALA, Abhinav; RICHARDELLA, Anthony; DUMING ZHANG et al.Nano letters (Print). 2013, Vol 13, Num 6, pp 2471-2476, issn 1530-6984, 6 p.Article

High pressure transport properties of the topological insulator Bi2Se3HAMLIN, J. J; JEFFRIES, J. R; BUTCH, N. P et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 3, issn 0953-8984, 035602.1-035602.5Article

Pre-crystallization kinetics of the Bi10Se90 glassMOHARRAM, A. H; EL-OYOUN, M. A.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 6, pp 700-703, issn 0022-3727Article

Preparation and characterization of Bi2Se3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) methodSANKAPAL, B. R; MANE, R. S; LOKHANDE, C. D et al.Materials chemistry and physics. 2000, Vol 63, Num 3, pp 230-234, issn 0254-0584Article

Conduction studies on bismuth selenide thin filmsNATARAJ, D; SENTHIL, K; NARAYANDASS, S. K et al.Crystal research and technology (1979). 1999, Vol 34, Num 7, pp 867-872, issn 0232-1300Article

Properties of Bi2Se3 single crystals doped with Pb atomsLOSTAK, P; HORAK, J; NAVRATIL, J et al.Physica status solidi. A. Applied research. 1993, Vol 136, Num 2, pp K121-K125, issn 0031-8965Article

Synthesis of Bi2Se3 thermoelectric nanosheets and nanotubes through hydrothermal co-reduction methodHONGMEI CUI; HONG LIU; XIA LI et al.Journal of solid state chemistry (Print). 2004, Vol 177, Num 11, pp 4001-4006, issn 0022-4596, 6 p.Article

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